For this reason, S-Parameters are needed. The paper shows limitations, e.g., cross-coupling of multiple devices and frequency accuracy. In some areas, power modules are analyzed using lumped elements. The goal is to avoid the production and measurement of many prototype modules. The simulation helps to qualify and optimize power module designs in an early design phase. This article shows how S-Parameter techniques can be utilized. A more systematic computer-based design approach is mandatory to address this multi-dimensional problem. Such a hand design is based on the designer’s personal experience and is not only cost-sensitive but also time-consuming. This results in many prototypes, which are evaluated and improved until the specifications are met. Since standard simulation programs are insufficient, as will be shown below, complex power modules are designed using a trial-and-error process. 2: Power modules are a four-dimensional design challenge. Matched and optimized electrical behavior of the devices also leads to low EMC radiation.įig. This stress reduces the lifetime of the components in the package and must be avoided. If the static and switching of the individual devices in the package are no longer uniform, their individual power dissipation results in different device temperatures and thermal stress. However, changes in the electrical domain lead to implicit changes in thermal and EMC behavior. The change may alter the homogeneous current distribution through all devices (DC behavior), and the change could modify the switching behavior for the different devices in the module (AC behavior). For example, a simple change in the component placement affects all domains shown in figure 2. This means a designer can no longer predict the potential contradictory effects of a single design change. This makes the verification of a power module using a simulation-driven approach essential.Īlready in traditional power modules, the designer was faced with a polylemma. Additionally, the device package of a SiC MOSFET is much smaller than a Si IGBT with similar electrical characteristics. Compared to that, SiC MOSFET can operate in an MHz frequency range. Currently, Si IGBTs operate in a frequency range of about 100 kHz. The unique switching characteristics of power modules using wide bandgap semiconductors are dominated by higher frequencies compared to silicon (Si) IGBTs. New materials and device technologies, such as wide bandgap semiconductors, including silicon carbide (SiC) or gallium nitride (GaN) require enhanced verification methods. Power modules are high-power switching circuits that convert DC- in AC-currents in electric vehicles, renewable energy, and many more applications. By Wilfried Wessel (Siemens EDA), Simon Liebetegger (University of Applied Sciences Darmstadt), and Florian Bauer (Siemens EDA)
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